All MOSFET. HGB039N08S Datasheet

 

HGB039N08S Datasheet and Replacement


   Type Designator: HGB039N08S
   Marking Code: GB039N08S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 64 nC
   trⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 602 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
   Package: TO-263
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HGB039N08S Datasheet (PDF)

 ..1. Size:851K  cn hunteck
 hgb039n08s hgk039n08s hgp039n08s.pdf pdf_icon

HGB039N08S

,HGB039N08S HGK039N08S P-1HGP039N08S80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 2.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 3.1RDS(on),typ m Enhanced Avalanche RuggednessTO-220 3.2RDS(on),typ m 100% UIS Tested, 100% Rg Tested187 AID (Sillicon Limited) Lead Free120 AID (Package Limit

 5.1. Size:807K  cn hunteck
 hgb039n08a hgp039n08a.pdf pdf_icon

HGB039N08S

,HGB039N08A HGP039N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Smooth SwitchingTO-263 2.9RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 3.2RDS(on),typ m Enhanced Avalanche Ruggedness196 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectific

 7.1. Size:925K  cn hunteck
 hgb039n12s hgk039n12s hgp039n12s.pdf pdf_icon

HGB039N08S

,HGB039N12S HGK039N12S P-1HGP039N12S120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Smooth Switching3.6RDS(on),TYP m Enhanced Body diode dv/dt capability197 AID (Sillicon Limited) Enhanced Avalanche Ruggedness180 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard

 7.2. Size:973K  cn hunteck
 hgb039n15m hgp039n15m.pdf pdf_icon

HGB039N08S

, P-1HGB039N15M HGP039N15M150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.2RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 3.6RDS(on),typ mW Enhanced Avalanche Ruggedness206 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested180 AID (Package Limited) Lead FreeApplication Synchronous Rectificat

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History: NCEP058N85D | IXTV110N25TS | AUIRF7675M2

Keywords - HGB039N08S MOSFET datasheet

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