HGP039N12S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP039N12S
Marking Code: GP039N12S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 357 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 180 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 68 nC
Rise Time (tr): 20 nS
Drain-Source Capacitance (Cd): 716 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0039 Ohm
Package: TO-220
HGP039N12S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP039N12S Datasheet (PDF)
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hgb039n08s hgk039n08s hgp039n08s.pdf
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Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
