HGP055N12S Datasheet. Specs and Replacement

Type Designator: HGP055N12S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 273 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 146 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 509 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm

Package: TO-220

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HGP055N12S datasheet

 ..1. Size:978K  cn hunteck
hgb055n12s hgp055n12s.pdf pdf_icon

HGP055N12S

, P-1 HGB055N12S HGP055N12S 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 4.8 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 5.1 RDS(on),typ mW Enhanced Avalanche Ruggedness 146 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switchi... See More ⇒

 9.1. Size:919K  cn hunteck
hgb059n08a hgp059n08a.pdf pdf_icon

HGP055N12S

, P-1 HGB059N08A HGP059N08A 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 5.2 RDS(on),typ mW Enhanced Avalanche Ruggedness 97 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒

 9.2. Size:849K  cn hunteck
hgb059n12s hgp059n12s.pdf pdf_icon

HGP055N12S

, HGB059N12S HGP059N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Smooth Switching TO-263 4.4 RDS(on),typ m Enhanced Body diode dv/dt capability TO-220 4.7 RDS(on),typ m Enhanced Avalanche Ruggedness 160 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 120 A ID (Package Limited) Lead Free Application Synchronous Rectif... See More ⇒

 9.3. Size:1121K  cn hunteck
hgb057n15s hgk057n15s hgp057n15s.pdf pdf_icon

HGP055N12S

, HGB057N15S HGK057N15S P-1 HGP057N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 5.3 RDS(on),TYP mW Enhanced Body diode dv/dt capability TO-247 5.4 RDS(on),TYP mW Enhanced Avalanche Ruggedness TO-220 5.5 RDS(on),TYP mW 100% UIS Tested, 100% Rg Tested 161 A Lead Free ID (Sillicon Limited) Application Synchr... See More ⇒

Detailed specifications: HGP050N10A, HGB050N14S, HGP050N14S, HGB053N06S, HGP053N06S, HGB053N06SL, HGP053N06SL, HGB055N12S, 18N50, HGB057N15S, HGK057N15S, HGP057N15S, HGB058N08SL, HGP058N08SL, HGB059N08A, HGP059N08A, HGB059N12S

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