All MOSFET. FDS8876 Datasheet

 

FDS8876 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDS8876
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 12.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 34 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: SO-8

 FDS8876 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDS8876 Datasheet (PDF)

 ..1. Size:622K  fairchild semi
fds8876.pdf

FDS8876
FDS8876

April 2007tmFDS8876N-Channel PowerTrench MOSFET 30V, 12.5A, 8.2mFeatures General Description rDS(on) = 8.2m, VGS = 10V, ID = 12.5A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 10.2m, VGS = 4.5V, ID = 11.4Aeither synchronous or conventional switching PWM controllers. It has been optimize

 8.1. Size:684K  fairchild semi
fds8870.pdf

FDS8876
FDS8876

April 2007tmFDS8870N-Channel PowerTrench MOSFET 30V, 18A, 4.2mFeatures General Description rDS(on) = 4.2m, VGS = 10V, ID = 18A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 4.9m, VGS = 4.5V, ID = 17Aeither synchronous or conventional switching PWM controllers. It has been optimized for l

 8.2. Size:652K  fairchild semi
fds8878.pdf

FDS8876
FDS8876

December 2008FDS8878N-Channel PowerTrench MOSFET 30V, 10.2A, 14mFeatures General Description rDS(on) = 14m, VGS = 10V, ID = 10.2A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 17m, VGS = 4.5V, ID = 9.3Aeither synchronous or conventional switching PWM controllers. It has been optimized for

 8.3. Size:625K  fairchild semi
fds8874.pdf

FDS8876
FDS8876

April 2007tmFDS8874N-Channel PowerTrench MOSFET 30V, 16A, 5.5mFeatures General Description rDS(on) = 5.5m, VGS = 10V, ID = 16A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using rDS(on) = 7.0m, VGS = 4.5V, ID = 15Aeither synchronous or conventional switching PWM controllers. It has been optimized for l

 8.4. Size:477K  onsemi
fds8870.pdf

FDS8876
FDS8876

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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