All MOSFET. HGP080N08SL Datasheet

 

HGP080N08SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGP080N08SL
   Marking Code: GP080N08SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 247 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0077 Ohm
   Package: TO-220

 HGP080N08SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGP080N08SL Datasheet (PDF)

 ..1. Size:814K  cn hunteck
 hgb080n08sl hgp080n08sl.pdf

HGP080N08SL HGP080N08SL

HGB080N08SL , HGP080N08SL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level6.0RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V8.4RDS(on),typ m Enhanced Avalanche Ruggedness6.3RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V8.7RDS(on),typ m Lead Free, Halogen

 7.1. Size:944K  cn hunteck
 hgp080n10s.pdf

HGP080N08SL HGP080N08SL

HGP080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability7.1RDS(on),typ mW Enhanced Avalanche Ruggedness82 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

 7.2. Size:924K  cn hunteck
 hgb080n10al hgp080n10al.pdf

HGP080N08SL HGP080N08SL

HGB080N10AL , HGP080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness7.1RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested9.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free85 AID (Sillico

 7.3. Size:1002K  cn hunteck
 hgp080n10sl.pdf

HGP080N08SL HGP080N08SL

HGP080N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness85 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

 7.4. Size:915K  cn hunteck
 hgb080n10a hgp080n10a.pdf

HGP080N08SL HGP080N08SL

, P-1HGB080N10AHGP080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 7.6RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 7.6RDS(on),typ mW Enhanced Avalanche Ruggedness84.3 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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