All MOSFET. HGP080N10AL Datasheet

 

HGP080N10AL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGP080N10AL
   Marking Code: GP080N10AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 85 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 32 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 348 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0102 Ohm
   Package: TO-220

 HGP080N10AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGP080N10AL Datasheet (PDF)

 ..1. Size:924K  cn hunteck
 hgb080n10al hgp080n10al.pdf

HGP080N10AL HGP080N10AL

HGB080N10AL , HGP080N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness7.1RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested9.3RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free85 AID (Sillico

 4.1. Size:915K  cn hunteck
 hgb080n10a hgp080n10a.pdf

HGP080N10AL HGP080N10AL

, P-1HGB080N10AHGP080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power SwitchingTO-263 7.6RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 7.6RDS(on),typ mW Enhanced Avalanche Ruggedness84.3 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching

 5.1. Size:944K  cn hunteck
 hgp080n10s.pdf

HGP080N10AL HGP080N10AL

HGP080N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability7.1RDS(on),typ mW Enhanced Avalanche Ruggedness82 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPSPin2 Hard Switching and High Speed Circuit DC/DC in Telecoms

 5.2. Size:1002K  cn hunteck
 hgp080n10sl.pdf

HGP080N10AL HGP080N10AL

HGP080N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level6.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness85 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain

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History: STT03N10

 

 
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