HGP080N10AL Datasheet. Specs and Replacement

Type Designator: HGP080N10AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 85 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 348 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0102 Ohm

Package: TO-220

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HGP080N10AL datasheet

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HGP080N10AL

HGB080N10AL , HGP080N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 6.9 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 7.1 RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested 9.3 RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free 85 A ID (Sillico... See More ⇒

 4.1. Size:915K  cn hunteck
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HGP080N10AL

, P-1 HGB080N10A HGP080N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 7.6 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 7.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 84.3 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching ... See More ⇒

 5.1. Size:944K  cn hunteck
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HGP080N10AL

HGP080N10S P-1 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 7.1 RDS(on),typ mW Enhanced Avalanche Ruggedness 82 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Pin2 Hard Switching and High Speed Circuit DC/DC in Telecoms ... See More ⇒

 5.2. Size:1002K  cn hunteck
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HGP080N10AL

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Detailed specifications: HGB070N15S, HGK070N15S, HGP070N15S, HGB080N08SL, HGP080N08SL, HGB080N10A, HGP080N10A, HGB080N10AL, RU7088R, HGB082N10M, HGP082N10M, HGB088N15S, HGP088N15S, HGB090N06SL, HGP090N06SL, HGB095NE4SL, HGP095NE4SL

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