All MOSFET. HGB098N10A Equivalents Search

 

HGB098N10A Spec and Replacement


   Type Designator: HGB098N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 71 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 262 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
   Package: TO-263

 HGB098N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGB098N10A Specs

 ..1. Size:926K  cn hunteck
hgb098n10a hgp098n10a.pdf pdf_icon

HGB098N10A

HGB098N10A , P-1 HGP098N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching RDS(on),typ TO-263 VGS=10V 8.8 mW Enhanced Body diode dv/dt capability RDS(on),typ TO-220 VGS=10V 9.0 mW Enhanced Avalanche Ruggedness 70.7 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in ... See More ⇒

 0.1. Size:924K  cn hunteck
hgb098n10al hgp098n10al.pdf pdf_icon

HGB098N10A

, P-1 HGB098N10AL HGP098N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 8.4 RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested 11.3 RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free 68 A ID (Sil... See More ⇒

 9.1. Size:816K  cn hunteck
hgb095ne4sl hgp095ne4sl.pdf pdf_icon

HGB098N10A

HGB095NE4SL , HGP095NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 7.6 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 10.7 RDS(on),typ m Enhanced Avalanche Ruggedness 7.9 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 11 RDS(on),typ m Lead Free, Halogen... See More ⇒

 9.2. Size:800K  cn hunteck
hgb090n06sl hgp090n06sl.pdf pdf_icon

HGB098N10A

HGB090N06SL HGP090N06SL , P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 7.0 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 9.7 RDS(on),typ m Enhanced Avalanche Ruggedness 7.3 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 10.0 RDS(on),typ m Lead Free, Halogen... See More ⇒

Detailed specifications: HGB082N10M , HGP082N10M , HGB088N15S , HGP088N15S , HGB090N06SL , HGP090N06SL , HGB095NE4SL , HGP095NE4SL , IRF3205 , HGP098N10A , HGB098N10AL , HGP098N10AL , HGB100N12S , HGP100N12S , HGB105N15M , HGK105N15M , HGP105N15M .

History: AP50WN750I | HGP098N10A | HGP155N15S | UPA2755GR

Keywords - HGB098N10A MOSFET specs

 HGB098N10A cross reference
 HGB098N10A equivalent finder
 HGB098N10A lookup
 HGB098N10A substitution
 HGB098N10A replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 
Back to Top

 


History: AP50WN750I | HGP098N10A | HGP155N15S | UPA2755GR

social 

LIST

Last Update

MOSFET: AP30H150K | AP30H150G | AP3065SD

 

 

 
Back to Top

 

Popular searches

2n3416 | bdx53c | k3563 | d882p | 2sb1560 | 2n1304 | 2sa979 | 2sc4793

 


 
.