HGB098N10AL Spec and Replacement
Type Designator: HGB098N10AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 97 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 68 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 273 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: TO-263
HGB098N10AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGB098N10AL Specs
hgb098n10al hgp098n10al.pdf
, P-1 HGB098N10AL HGP098N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 8.4 RDS(on),typ VGS=10V mW 100% UIS Tested, 100% Rg Tested 11.3 RDS(on),typ VGS=4.5V mW Lead Free, Halogen Free 68 A ID (Sil... See More ⇒
hgb098n10a hgp098n10a.pdf
HGB098N10A , P-1 HGP098N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching RDS(on),typ TO-263 VGS=10V 8.8 mW Enhanced Body diode dv/dt capability RDS(on),typ TO-220 VGS=10V 9.0 mW Enhanced Avalanche Ruggedness 70.7 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in ... See More ⇒
hgb095ne4sl hgp095ne4sl.pdf
HGB095NE4SL , HGP095NE4SL P-1 45V N-Ch Power MOSFET Feature 45 V VDS High Speed Power Switching, Logic Level 7.6 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 10.7 RDS(on),typ m Enhanced Avalanche Ruggedness 7.9 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 11 RDS(on),typ m Lead Free, Halogen... See More ⇒
hgb090n06sl hgp090n06sl.pdf
HGB090N06SL HGP090N06SL , P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 7.0 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 9.7 RDS(on),typ m Enhanced Avalanche Ruggedness 7.3 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 10.0 RDS(on),typ m Lead Free, Halogen... See More ⇒
Detailed specifications: HGB088N15S , HGP088N15S , HGB090N06SL , HGP090N06SL , HGB095NE4SL , HGP095NE4SL , HGB098N10A , HGP098N10A , IRF840 , HGP098N10AL , HGB100N12S , HGP100N12S , HGB105N15M , HGK105N15M , HGP105N15M , HGB105N15S , HGP105N15S .
History: AP60N04DF
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
