All MOSFET. HGB105N15M Datasheet

 

HGB105N15M Datasheet and Replacement


   Type Designator: HGB105N15M
   Marking Code: GB105N15M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 333 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 74 nC
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0104 Ohm
   Package: TO-263
 

 HGB105N15M substitution

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HGB105N15M Datasheet (PDF)

 ..1. Size:872K  cn hunteck
 hgb105n15m hgk105n15m hgp105n15m.pdf pdf_icon

HGB105N15M

, P-1HGB105N15M HGK105N15MHGP105N15M150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 8.5RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 8.7RDS(on),typ m Enhanced Avalanche RuggednessTO-220 8.8RDS(on),typ m 100% UIS Tested, 100% Rg Tested120 AID (Sillicon Limited) Lead FreeApplication Synch

 5.1. Size:979K  cn hunteck
 hgb105n15s hgp105n15s.pdf pdf_icon

HGB105N15M

,HGB105N15S HGP105N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power SwitchingTO-263 9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-220 9.3RDS(on),typ mW Enhanced Avalanche Ruggedness104 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS

 5.2. Size:855K  cn hunteck
 hgb105n15sl hgp105n15sl.pdf pdf_icon

HGB105N15M

HGB105N15SL HGP105N15SL, P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth Switching, Logic LevelTO-263 8.7RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 9RDS(on),typ m Enhanced Avalanche Ruggedness122 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead FreeApplication Synch

 9.1. Size:813K  cn hunteck
 hgb100n12s hgp100n12s.pdf pdf_icon

HGB105N15M

,HGB100N12S HGP100N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power SwitchingTO-263 8.3RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-220 8.6RDS(on),typ m Enhanced Avalanche Ruggedness109 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching

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History: 2SK68A | FQPF9N90C

Keywords - HGB105N15M MOSFET datasheet

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