HGB110N10SL Spec and Replacement
Type Designator: HGB110N10SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 73 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 162 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0107 Ohm
Package: TO-263
HGB110N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGB110N10SL Specs
hgb110n10sl hgp110n10sl.pdf
HGB110N10SL , HGP110N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.7 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 10.7 RDS(on),typ m Enhanced Avalanche Ruggedness 9.0 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 11 RDS(on),typ m Lead Free, Halog... See More ⇒
hgb110n20s hgk110n20s hgp110n20s.pdf
, HGB110N20S HGK110N20S P-1 HGP110N20S 200V N-Ch Power MOSFET Feature 200 V VDS High Speed Power Smooth Switching TO-263 9.1 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 9.4 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 132 A ID (Sillicon Limited) Lead Free Application Synch... See More ⇒
hgb115n15s hgp115n15s.pdf
HGB115N15S , HGP115N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 9.4 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 9.7 RDS(on),typ mW Enhanced Avalanche Ruggedness 91 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Swit... See More ⇒
Detailed specifications: HGP100N12S , HGB105N15M , HGK105N15M , HGP105N15M , HGB105N15S , HGP105N15S , HGB105N15SL , HGP105N15SL , IRF640N , HGP110N10SL , HGB110N20S , HGK110N20S , HGP110N20S , HGB115N15S , HGP115N15S , HGB120N10A , HGP120N10A .
History: HGK110N20S
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