HGP110N10SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP110N10SL
Marking Code: GP110N10SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 73 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 29 nC
Rise Time (tr): 3 nS
Drain-Source Capacitance (Cd): 162 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0107 Ohm
Package: TO-220
HGP110N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP110N10SL Datasheet (PDF)
hgb110n10sl hgp110n10sl.pdf
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,HGB110N20S HGK110N20S P-1HGP110N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth SwitchingTO-263 9.1RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 8.7RDS(on),typ m Enhanced Avalanche RuggednessTO-220 9.4RDS(on),typ m 100% UIS Tested, 100% Rg Tested132 AID (Sillicon Limited) Lead FreeApplication Synch
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HGB115N15S, HGP115N15S P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching TO-263 9.4RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 9.7RDS(on),typ mW Enhanced Avalanche Ruggedness 91 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Swit
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
