HGP110N20S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP110N20S
Marking Code: GP110N20S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 429 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 132 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 56 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 420 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0109 Ohm
Package: TO-220
HGP110N20S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP110N20S Datasheet (PDF)
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HGB110N10SL , HGP110N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.7RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capabilityVGS=4.5V10.7RDS(on),typ m Enhanced Avalanche Ruggedness9.0RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg TestedVGS=4.5V11RDS(on),typ m Lead Free, Halog
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HGB115N15S, HGP115N15S P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching TO-263 9.4RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 9.7RDS(on),typ mW Enhanced Avalanche Ruggedness 91 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Swit
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