HGP110N20S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP110N20S
Marking Code: GP110N20S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 429 W
Maximum Drain-Source Voltage |Vds|: 200 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 132 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 56 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 420 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0109 Ohm
Package: TO-220
HGP110N20S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP110N20S Datasheet (PDF)
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Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .