HGP110N20S Datasheet. Specs and Replacement
Type Designator: HGP110N20S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 429 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 132 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 420 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0109 Ohm
Package: TO-220
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HGP110N20S substitution
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HGP110N20S datasheet
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, HGB110N20S HGK110N20S P-1 HGP110N20S 200V N-Ch Power MOSFET Feature 200 V VDS High Speed Power Smooth Switching TO-263 9.1 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 9.4 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 132 A ID (Sillicon Limited) Lead Free Application Synch... See More ⇒
hgb110n10sl hgp110n10sl.pdf
HGB110N10SL , HGP110N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.7 RDS(on),typ TO-263 VGS=10V m Enhanced Body diode dv/dt capability VGS=4.5V 10.7 RDS(on),typ m Enhanced Avalanche Ruggedness 9.0 RDS(on),typ TO-220 VGS=10V m 100% UIS Tested, 100% Rg Tested VGS=4.5V 11 RDS(on),typ m Lead Free, Halog... See More ⇒
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HGB115N15S , HGP115N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching TO-263 9.4 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 9.7 RDS(on),typ mW Enhanced Avalanche Ruggedness 91 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Swit... See More ⇒
Detailed specifications: HGB105N15S, HGP105N15S, HGB105N15SL, HGP105N15SL, HGB110N10SL, HGP110N10SL, HGB110N20S, HGK110N20S, IRF3710, HGB115N15S, HGP115N15S, HGB120N10A, HGP120N10A, HGB130N12S, HGP130N12S, HGB155N15S, HGP155N15S
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