All MOSFET. HGK210N20S Datasheet

 

HGK210N20S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGK210N20S
   Marking Code: GK210N20S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 35 nC
   trⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
   Package: TO-247

 HGK210N20S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGK210N20S Datasheet (PDF)

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 hgb210n20s hgk210n20s hgp210n20s.pdf

HGK210N20S HGK210N20S

, P-1HGB210N20S HGK210N20SHGP210N20S200V N-Ch Power MOSFETFeature200 VVDS High Speed Power Smooth Switching16RDS(on),typ mW Enhanced Body diode dv/dt capability70 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPSTO-263 TO-220 Hard Switching and Hig

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