HGK390N25S Datasheet and Replacement
Type Designator: HGK390N25S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 172 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TO-247
HGK390N25S substitution
HGK390N25S Datasheet (PDF)
hgb390n25s hgp390n25s hgk390n25s.pdf

, P-1HGB390N25S HGP390N25SHGK390N25S250V N-Ch Power MOSFETFeature250 VVDS High Speed Power Smooth Switching31RDS(on),typ mW Enhanced Body diode dv/dt capability50 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit
Datasheet: HGP220N25S , HGB290N10SL , HGP290N10SL , HGB320N20S , HGK320N20S , HGP320N20S , HGB390N25S , HGP390N25S , STP80NF70 , HGB480N15M , HGP480N15M , HGB640N25S , HGK640N25S , HGP640N25S , HGD028NE6A , HGD028NE6AL , HGD029NE4SL .
History: IRF7460 | DMN1025UFDB | NDP7060
Keywords - HGK390N25S MOSFET datasheet
HGK390N25S cross reference
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History: IRF7460 | DMN1025UFDB | NDP7060



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