HGK390N25S Datasheet. Specs and Replacement
Type Designator: HGK390N25S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 172 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TO-247
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HGK390N25S datasheet
hgb390n25s hgp390n25s hgk390n25s.pdf
, P-1 HGB390N25S HGP390N25S HGK390N25S 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Smooth Switching 31 RDS(on),typ mW Enhanced Body diode dv/dt capability 50 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit... See More ⇒
Detailed specifications: HGP220N25S, HGB290N10SL, HGP290N10SL, HGB320N20S, HGK320N20S, HGP320N20S, HGB390N25S, HGP390N25S, IRF530, HGB480N15M, HGP480N15M, HGB640N25S, HGK640N25S, HGP640N25S, HGD028NE6A, HGD028NE6AL, HGD029NE4SL
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