HGP640N25S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGP640N25S
Marking Code: GP640N25S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 35 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Total Gate Charge (Qg): 20 nC
Rise Time (tr): 18 nS
Drain-Source Capacitance (Cd): 104 pF
Maximum Drain-Source On-State Resistance (Rds): 0.064 Ohm
Package: TO-220
HGP640N25S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP640N25S Datasheet (PDF)
hgb640n25s hgk640n25s hgp640n25s.pdf
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