HGP640N25S Spec and Replacement
Type Designator: HGP640N25S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 104 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
Package: TO-220
HGP640N25S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGP640N25S Specs
hgb640n25s hgk640n25s hgp640n25s.pdf
, HGB640N25S HGP640N25S P-1 HGK640N25S 250V N-Ch Power MOSFET Feature 250 V VDS High Speed Power Switching TO-263 50 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 50 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 50 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 35 A ID Lead Free Application Synchronous Rectification in SMPS ... See More ⇒
Detailed specifications: HGP320N20S , HGB390N25S , HGP390N25S , HGK390N25S , HGB480N15M , HGP480N15M , HGB640N25S , HGK640N25S , IRFP450 , HGD028NE6A , HGD028NE6AL , HGD029NE4SL , HGD032NE4S , HGD035N08A , HGD035N08AL , HGD040N06S , HGD040N06SL .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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