All MOSFET. HGP640N25S Datasheet

 

HGP640N25S Datasheet and Replacement


   Type Designator: HGP640N25S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.064 Ohm
   Package: TO-220
 

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HGP640N25S Datasheet (PDF)

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HGP640N25S

,HGB640N25S HGP640N25S P-1HGK640N25S250V N-Ch Power MOSFETFeature250 VVDS High Speed Power SwitchingTO-263 50RDS(on),typ m Enhanced Body diode dv/dt capabilityTO-247 50RDS(on),typ m Enhanced Avalanche RuggednessTO-220 50RDS(on),typ m 100% UIS Tested, 100% Rg Tested35 AID Lead FreeApplication Synchronous Rectification in SMPS

Datasheet: HGP320N20S , HGB390N25S , HGP390N25S , HGK390N25S , HGB480N15M , HGP480N15M , HGB640N25S , HGK640N25S , IRF1407 , HGD028NE6A , HGD028NE6AL , HGD029NE4SL , HGD032NE4S , HGD035N08A , HGD035N08AL , HGD040N06S , HGD040N06SL .

History: IRF2805L

Keywords - HGP640N25S MOSFET datasheet

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