HGD028NE6A Datasheet and Replacement
Type Designator: HGD028NE6A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1501 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: TO-252
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HGD028NE6A Datasheet (PDF)
hgd028ne6a.pdf

HGD028NE6A P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching2.6RDS(on),typ mW Enhanced Body diode dv/dt capability160 AID (Sillicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and H
hgd028ne6al.pdf

HGD028NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic Level2.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness168 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re
hgd029ne4sl.pdf

HGD029NE4SL P-145V N-Ch Power MOSFET45 VVDSFeature2.5RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level3.2RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability156 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Syn
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: ALD1103DB | CHM85A3PAGP | SQ9407EY-T1 | TK7P65W | SFFX054Z
Keywords - HGD028NE6A MOSFET datasheet
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History: ALD1103DB | CHM85A3PAGP | SQ9407EY-T1 | TK7P65W | SFFX054Z



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