HGD028NE6A MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD028NE6A
Marking Code: GD028NE6A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 66 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1501 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0031 Ohm
Package: TO-252
HGD028NE6A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD028NE6A Datasheet (PDF)
hgd028ne6a.pdf
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HGD028NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic Level2.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability3.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness168 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re
hgd029ne4sl.pdf
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