HGD035N08A MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD035N08A
Marking Code: GD035N08A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 120 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 68 nC
trⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 703 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm
Package: TO-252
HGD035N08A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD035N08A Datasheet (PDF)
hgd035n08a.pdf
HGD035N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching3.2RDS(on),typ mW Enhanced Body diode dv/dt capability144 AID (Silicon Limited) Enhanced Avalanche Ruggedness120 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and Hi
hgd035n08al.pdf
HGD035N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic Level3.1RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability4.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness140 AID (Silicon Limited) 100% UIS Tested, 100% Rg Tested120 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rec
hgd032ne4s.pdf
P-1HGD032NE4S45V N-Ch Power MOSFETFeature45 VVDS Optimized for high speed switching2.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability148 AID (Sillicon Limited) Enhanced Avalanche Ruggedness70 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainTO-252
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