HGD059N08A Datasheet. Specs and Replacement

Type Designator: HGD059N08A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 89 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 502 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0059 Ohm

Package: TO-252

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HGD059N08A datasheet

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HGD059N08A

, P-1 HGD059N08A HGI059N08A 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability 89 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circu... See More ⇒

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HGD059N08A

, P-1 HGD059N08AL HGI059N08AL 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 4.6 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 7.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 88 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification i... See More ⇒

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HGD059N08A

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HGD059N08A

HGD058N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching,Logic Level 4.3 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.9 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 110 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 70 A ID (Package Limited) Lead Free Application Synchronous Rectification ... See More ⇒

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Detailed specifications: HGD045NE4SL, HGD046NE6A, HGD046NE6AL, HGD050N10A, HGD053N06S, HGD053N06SL, HGI053N06SL, HGD058N08SL, IRFZ24N, HGI059N08A, HGD059N08AL, HGI059N08AL, HGD077N10SL, HGI077N10SL, HGD080N10A, HGI080N10A, HGD080N10AL

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