All MOSFET. HGI080N10A Datasheet

 

HGI080N10A MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGI080N10A
   Marking Code: GI080N10A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 88 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-251

 HGI080N10A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGI080N10A Datasheet (PDF)

 ..1. Size:954K  cn hunteck
 hgd080n10a hgi080n10a.pdf

HGI080N10A HGI080N10A

, P-1HGD080N10AHGI080N10A100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching6.7RDS(on),typ mW Enhanced Body diode dv/dt capability88 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC in

 0.1. Size:962K  cn hunteck
 hgd080n10al hgi080n10al.pdf

HGI080N10A HGI080N10A

HGD080N10AL , P-1HGI080N10AL100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level7.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9.1RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness83 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication

 7.1. Size:900K  cn hunteck
 hgi080n08sl hgd080n08sl.pdf

HGI080N10A HGI080N10A

HGI080N08SL HGD080N08SL P-1,80V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic LevelVGS=10V6.3RDS(on),typ m Enhanced Body diode dv/dt capabilityVGS=4.5V8.7RDS(on),typ m Enhanced Avalanche Ruggedness85 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested70 AID (Package Limited) Lead Free, Halogen FreeApplication

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