HGI080N10AL Datasheet. Specs and Replacement
Type Designator: HGI080N10AL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 348 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-251
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HGI080N10AL datasheet
hgd080n10al hgi080n10al.pdf
HGD080N10AL , P-1 HGI080N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 7.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9.1 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 83 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 70 A ID (Package Limited) Lead Free, Halogen Free Application ... See More ⇒
hgd080n10a hgi080n10a.pdf
, P-1 HGD080N10A HGI080N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 6.7 RDS(on),typ mW Enhanced Body diode dv/dt capability 88 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit DC/DC in ... See More ⇒
hgi080n08sl hgd080n08sl.pdf
HGI080N08SL HGD080N08SL P-1 , 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic Level VGS=10V 6.3 RDS(on),typ m Enhanced Body diode dv/dt capability VGS=4.5V 8.7 RDS(on),typ m Enhanced Avalanche Ruggedness 85 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 70 A ID (Package Limited) Lead Free, Halogen Free Application ... See More ⇒
Detailed specifications: HGI059N08A, HGD059N08AL, HGI059N08AL, HGD077N10SL, HGI077N10SL, HGD080N10A, HGI080N10A, HGD080N10AL, 7N60, HGD090NE6A, HGI090NE6A, HGD090NE6AL, HGI090NE6AL, HGD092NE6AL, HGD093N12SL, HGD095NE4SL, HGI095NE4SL
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