All MOSFET. HGI090NE6AL Datasheet

 

HGI090NE6AL Datasheet and Replacement


   Type Designator: HGI090NE6AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 63 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 518 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm
   Package: TO-251
 

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HGI090NE6AL Datasheet (PDF)

 ..1. Size:1141K  cn hunteck
 hgd090ne6al hgi090ne6al.pdf pdf_icon

HGI090NE6AL

HGD090NE6AL , HGI090NE6AL P-165V N-Ch Power MOSFETFeature65 VVDS High Speed Power Switching, Logic level 7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness58 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in

 4.1. Size:986K  cn hunteck
 hgd090ne6a hgi090ne6a.pdf pdf_icon

HGI090NE6AL

HGD090NE6A , HGI090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability7.8RDS(on),typ mW Enhanced Avalanche Ruggedness57 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit

 7.1. Size:908K  cn hunteck
 hgi090n06sl hgd090n06sl.pdf pdf_icon

HGI090NE6AL

HGI090N06SL HGD090N06SL, P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness61 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested40 AID (Package Limited) Lead Free, Halogen FreeApplication

 9.1. Size:894K  cn hunteck
 hgd095ne4sl hgi095ne4sl.pdf pdf_icon

HGI090NE6AL

HGD095NE4SL , HGI095NE4SL P-145V N-Ch Power MOSFETFeature45 VVDS High Speed Power Switching, Logic Level7.5RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness56 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested35 AID (Package Limited) Lead Free, Halogen FreeApplication

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Datasheet: HGI077N10SL , HGD080N10A , HGI080N10A , HGD080N10AL , HGI080N10AL , HGD090NE6A , HGI090NE6A , HGD090NE6AL , 60N06 , HGD092NE6AL , HGD093N12SL , HGD095NE4SL , HGI095NE4SL , HGD098N10A , HGI098N10A , HGD098N10AL , HGI098N10AL .

History: FMP10N60E | SI7625DN | IXFX170N20P | UTT6NP10G-S08-R | SIA537EDJ | HMS11N65D | QM2N7002E3K1

Keywords - HGI090NE6AL MOSFET datasheet

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