HGI098N10SL Datasheet. Specs and Replacement

Type Designator: HGI098N10SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 94 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 67 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 538 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm

Package: TO-251

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HGI098N10SL datasheet

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HGI098N10SL

HGD098N10SL , P-1 HGI098N10SL 100V N-Ch Power MOSFET Feature High Speed Power Switching, Logic Level 100 V VDS Enhanced Body diode dv/dt capability 8.3 RDS(on),typ VGS=10V mW Enhanced Avalanche Ruggedness 10.8 RDS(on),typ VGS=4.5V mW 100% UIS Tested, 100% Rg Tested 67 A ID (Sillicon Limited) Lead Free, Halogen Free Application Synchronous Rectification ... See More ⇒

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 hgd098n10al hgi098n10al.pdf pdf_icon

HGI098N10SL

, P-1 HGD098N10AL HGI098N10AL 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 65.9 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectificati... See More ⇒

 5.2. Size:961K  cn hunteck
 hgd098n10a hgi098n10a.pdf pdf_icon

HGI098N10SL

, P-1 HGD098N10A HGI098N10A 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 8.8 RDS(on),typ mW Enhanced Body diode dv/dt capability 67 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Cir... See More ⇒

 9.1. Size:986K  cn hunteck
 hgd090ne6a hgi090ne6a.pdf pdf_icon

HGI098N10SL

HGD090NE6A , HGI090NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 7.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 57 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit... See More ⇒

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Detailed specifications: HGD093N12SL, HGD095NE4SL, HGI095NE4SL, HGD098N10A, HGI098N10A, HGD098N10AL, HGI098N10AL, HGD098N10SL, 60N06, HGD100N12S, HGD100N12SL, HGD110N08A, HGI110N08A, HGD110N08AL, HGI110N08AL, HGD110N10SL, HGI110N10SL

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