HGD100N12S Specs and Replacement
Type Designator: HGD100N12S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 188 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 235 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-252
HGD100N12S substitution
HGD100N12S Specs
hgd100n12s.pdf
HGD100N12S P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching TO-252 8.6 RDS(on),typ m Enhanced Body diode dv/dt capability 102 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 70 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed C... See More ⇒
hgd100n12sl.pdf
HGD100N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching,Logic level 7.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 8.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 102 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 70 A ID (Package Limited) Lead Free Application Synchronous Rectification in... See More ⇒
Detailed specifications: HGD095NE4SL , HGI095NE4SL , HGD098N10A , HGI098N10A , HGD098N10AL , HGI098N10AL , HGD098N10SL , HGI098N10SL , IRFP064N , HGD100N12SL , HGD110N08A , HGI110N08A , HGD110N08AL , HGI110N08AL , HGD110N10SL , HGI110N10SL , HGD120N06SL .
Keywords - HGD100N12S MOSFET specs
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