HGI110N08A Datasheet. Specs and Replacement
Type Designator: HGI110N08A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 51 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 219 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: TO-251
📄📄 Copy
HGI110N08A substitution
- MOSFET ⓘ Cross-Reference Search
HGI110N08A datasheet
hgd110n08a hgi110n08a.pdf
HGD110N08A , HGI110N08A P-1 80V N-Ch Power MOSFET Feature High Speed Power Switching 80 V VDS Enhanced Body diode dv/dt capability 9.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 51 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit... See More ⇒
hgd110n08al hgi110n08al.pdf
HGD110N08AL , HGI110N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 9.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 13.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 50 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in... See More ⇒
Detailed specifications: HGI098N10A, HGD098N10AL, HGI098N10AL, HGD098N10SL, HGI098N10SL, HGD100N12S, HGD100N12SL, HGD110N08A, IRFZ44N, HGD110N08AL, HGI110N08AL, HGD110N10SL, HGI110N10SL, HGD120N06SL, HGI120N06SL, HGD155N15S, HGD170N10A
Keywords - HGI110N08A MOSFET specs
HGI110N08A cross reference
HGI110N08A equivalent finder
HGI110N08A pdf lookup
HGI110N08A substitution
HGI110N08A replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
