HGI120N06SL Datasheet. Specs and Replacement
Type Designator: HGI120N06SL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 318 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
Package: TO-251
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HGI120N06SL substitution
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HGI120N06SL datasheet
hgd120n06sl hgi120n06sl.pdf
HGD120N06SL , HGI120N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 8.5 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 12 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 47 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 35 A ID (Package Limited) Lead Free, Halogen Free Application ... See More ⇒
hgi120n10al hgd120n10al.pdf
, HGI120N10AL HGD120N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 11.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 15.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 60 A ID (Silicon limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Drain Synchronous Rectific... See More ⇒
hgi120n10a hgd120n10a.pdf
, HGI120N10A HGD120N10A P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 12.0 RDS(on),typ mW Enhanced Body diode dv/dt capability 59 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit DC/DC in ... See More ⇒
Detailed specifications: HGD100N12SL, HGD110N08A, HGI110N08A, HGD110N08AL, HGI110N08AL, HGD110N10SL, HGI110N10SL, HGD120N06SL, IRF540, HGD155N15S, HGD170N10A, HGI170N10A, HGD170N10AL, HGI170N10AL, HGD190N15SL, HGD195N15S, HGD195N15SL
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