FDS89161
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS89161
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.6
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 2.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 3
nC
trⓘ - Rise Time: 1.3
nS
Cossⓘ -
Output Capacitance: 43
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.105
Ohm
Package:
SO-8
FDS89161
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS89161
Datasheet (PDF)
..1. Size:260K fairchild semi
fds89161.pdf 
June 2011FDS89161Dual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 mFeatures General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 171 m at VGS = 6 V, ID = 2.1 A been optimized for rDS(on), switching performance and High performance
..2. Size:393K onsemi
fds89161.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
..3. Size:2683K kexin
fds89161.pdf
SMD Type MOSFETN-Channel Enhancement MOSFET FDS89161 (KDS89161)SOP-8 Features VDS (V) = 100V ID = 2.7 A RDS(ON) 105m (VGS = 10V)1.50 0.15 RDS(ON) 160m (VGS = 4.5V) High performance trench technology for extremely low rDS(on) CDM ESD Protection Level > 2KV typicalG2D25 4D2 S2Q26 3D1 G17 2Q1D1 8 1S1atings Ta = 25
0.1. Size:277K fairchild semi
fds89161lz.pdf
June 2011FDS89161LZDual N-Channel PowerTrench MOSFET 100 V, 2.7 A, 105 mFeatures General Description Max rDS(on) = 105 m at VGS = 10 V, ID = 2.7 A This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process Max rDS(on) = 160 m at VGS = 4.5 V, ID = 2.1 A that has been special tailored to minimize the on-state High
0.2. Size:394K onsemi
fds89161lz.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
8.1. Size:240K fairchild semi
fds89141.pdf
December 2010FDS89141Dual N-Channel PowerTrench MOSFET 100 V, 3.5 A, 62 mFeatures General Description Max rDS(on) = 62 m at VGS = 10 V, ID = 3.5 AThis N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has Max rDS(on) = 100 m at VGS = 6 V, ID = 2.8 A been optimized for rDS(on), switching performance and High performan
8.2. Size:373K onsemi
fds89141.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
Datasheet: FDS8882
, SP2702
, FDS8884
, SP2700
, FDS8896
, SP2458
, FDS89141
, SP2112
, RU6888R
, SP2110
, FDS89161LZ
, SP2108
, FDS8928A
, SP2107
, SP2106
, FDS8935
, FDS8949
.
