All MOSFET. HGD190N15SL Datasheet

 

HGD190N15SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGD190N15SL
   Marking Code: GD190N15SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 188 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 69 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 158 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO-252

 HGD190N15SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGD190N15SL Datasheet (PDF)

 ..1. Size:827K  cn hunteck
hgd190n15sl.pdf

HGD190N15SL
HGD190N15SL

HGD190N15SL P-1150V N-Ch Power MOSFET150 VVDSFeature16.0RDS(on),typ VGS=10V m Optimized for high speed smooth 19RDS(on),typ VGS=4.5V mswitching,Logic level 69 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Drain Hard Switching and H

 9.1. Size:910K  cn hunteck
hgd195n15s.pdf

HGD190N15SL
HGD190N15SL

HGD195N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching16.0RDS(on),typ mW Enhanced Body diode dv/dt capability56 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainTO-252 Hard Switching and High Speed Circuit

 9.2. Size:996K  cn hunteck
hgd195n15sl.pdf

HGD190N15SL
HGD190N15SL

P-1HGD195N15SL150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, Logic Level17.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness51 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrai

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