HGD190N15SL Datasheet. Specs and Replacement
Type Designator: HGD190N15SL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 188 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 69 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 158 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO-252
HGD190N15SL substitution
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HGD190N15SL datasheet
hgd190n15sl.pdf
HGD190N15SL P-1 150V N-Ch Power MOSFET 150 V VDS Feature 16.0 RDS(on),typ VGS=10V m Optimized for high speed smooth 19 RDS(on),typ VGS=4.5V m switching,Logic level 69 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Application DC-DC Conversion Drain Hard Switching and H... See More ⇒
hgd195n15s.pdf
HGD195N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 16.0 RDS(on),typ mW Enhanced Body diode dv/dt capability 56 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain TO-252 Hard Switching and High Speed Circuit ... See More ⇒
hgd195n15sl.pdf
P-1 HGD195N15SL 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching, Logic Level 17.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 20.0 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 51 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drai... See More ⇒
Detailed specifications: HGI110N10SL, HGD120N06SL, HGI120N06SL, HGD155N15S, HGD170N10A, HGI170N10A, HGD170N10AL, HGI170N10AL, IRLZ44N, HGD195N15S, HGD195N15SL, HGD1K2N20ML, HGI1K2N20ML, HGD210N12SL, HGD230N10A, HGD230N10AL, HGI230N10AL
Keywords - HGD190N15SL MOSFET specs
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