HGD190N15SL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGD190N15SL
Marking Code: GD190N15SL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 188 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 69 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 158 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: TO-252
HGD190N15SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGD190N15SL Datasheet (PDF)
hgd190n15sl.pdf
HGD190N15SL P-1150V N-Ch Power MOSFET150 VVDSFeature16.0RDS(on),typ VGS=10V m Optimized for high speed smooth 19RDS(on),typ VGS=4.5V mswitching,Logic level 69 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Drain Hard Switching and H
hgd195n15s.pdf
HGD195N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching16.0RDS(on),typ mW Enhanced Body diode dv/dt capability56 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainTO-252 Hard Switching and High Speed Circuit
hgd195n15sl.pdf
P-1HGD195N15SL150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, Logic Level17.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability20.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness51 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrai
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