HGM110N08AL Datasheet. Specs and Replacement

Type Designator: HGM110N08AL  📄📄 

Marking Code: M110N08L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V

Qg ⓘ - Total Gate Charge: 23 nC

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 205 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: DFN3.3X3.3

HGM110N08AL substitution

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HGM110N08AL datasheet

 ..1. Size:901K  cn hunteck
 hgm110n08al.pdf pdf_icon

HGM110N08AL

HGM110N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 9.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 13.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 34 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain ... See More ⇒

 4.1. Size:923K  cn hunteck
 hgm110n08a.pdf pdf_icon

HGM110N08AL

HGM110N08A P-1 80V N-Ch Power MOSFET Feature High Speed Power Switching 80 V VDS Enhanced Body diode dv/dt capability 9.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 34 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit DC/DC i... See More ⇒

Detailed specifications: HGM046NE6AL, HGM059N08AL, HGM079N06SL, HGM090NE6A, HGM090NE6AL, HGM095NE4SL, HGM098N10AL, HGM110N08A, AO4407, HGM120N06SL, HGM120N10AL, HGM170N10AL, HGM210N12SL, HGM230N10AL, HGM290N10SL, HGN012N03AL, HGN016N04BL

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