HGN036N08AL Datasheet. Specs and Replacement

Type Designator: HGN036N08AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 1200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: DFN5X6

HGN036N08AL substitution

- MOSFET ⓘ Cross-Reference Search

 

HGN036N08AL datasheet

 ..1. Size:771K  cn hunteck
 hgn036n08al.pdf pdf_icon

HGN036N08AL

HGN036N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 2.7 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 3.8 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 138 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Rectificatio... See More ⇒

 4.1. Size:765K  cn hunteck
 hgn036n08a.pdf pdf_icon

HGN036N08AL

HGN036N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 3.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 138 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switch... See More ⇒

 5.1. Size:776K  cn hunteck
 hgn036n08sl.pdf pdf_icon

HGN036N08AL

HGN036N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 3.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 3.7 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 132 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronou... See More ⇒

 5.2. Size:766K  cn hunteck
 hgn036n08s.pdf pdf_icon

HGN036N08AL

HGN036N08S P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 3.0 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 131 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switch... See More ⇒

SHOW MORE

Detailed specifications: HGN028NE6AL, HGN029NE4SL, HGN032NE4S, HGN035N08A, HGN035N08AL, HGN035N10A, HGN035N10AL, HGN036N08A, 7N60, HGN036N08S, HGN036N08SL, HGN040N06S, HGN040N06SL, HGN042N10A, HGN042N10AL, HGN042N10S, HGN042N10SL

Keywords - HGN036N08AL MOSFET specs

 HGN036N08AL cross reference

 HGN036N08AL equivalent finder

 HGN036N08AL pdf lookup

 HGN036N08AL substitution

 HGN036N08AL replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility