All MOSFET. HGN042N10AL Datasheet

 

HGN042N10AL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGN042N10AL
   Marking Code: GN042N10AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 93 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 893 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: DFN5X6

 HGN042N10AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGN042N10AL Datasheet (PDF)

 ..1. Size:786K  cn hunteck
 hgn042n10al.pdf

HGN042N10AL HGN042N10AL

HGN042N10AL P-1100V N-Ch Power MOSFET100 VVDSFeature3.4RDS(on),typ VGS=10V m Optimized for high speed smooth switching,Logic level4.6RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability129 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication

 4.1. Size:777K  cn hunteck
 hgn042n10a.pdf

HGN042N10AL HGN042N10AL

HGN042N10A P-1100V N-Ch Power MOSFET100 VVDSFeature3.7RDS(on),typ m Optimized for high speed smooth switching128 AID (Sillicon Limited) Enhanced Body diode dv/dt capability60 AID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching and

 5.1. Size:1155K  cn hunteck
 hgn042n10s.pdf

HGN042N10AL HGN042N10AL

HGN042N10S P-1100V N-Ch Power MOSFET VDSFeature 100 V3.7 RDS(on),typ mW Optimized for high speed smooth switching112 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching

 5.2. Size:1077K  cn hunteck
 hgn042n10sl.pdf

HGN042N10AL HGN042N10AL

P-1HGN042N10SL100V N-Ch Power MOSFET100 VFeature VDS3.5 Optimized for high speed smooth switching,Logic Level RDS(on),typ VGS=10V mW4.4RDS(on),typ VGS=4.5V mW Enhanced Body diode dv/dt capability116 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication

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