HGN046NE6A Datasheet. Specs and Replacement

Type Designator: HGN046NE6A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 769 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0046 Ohm

Package: DFN5X6

HGN046NE6A substitution

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HGN046NE6A datasheet

 ..1. Size:893K  cn hunteck
hgn046ne6a.pdf pdf_icon

HGN046NE6A

HGN046NE6A P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching 4.1 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 94 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 45 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switchin... See More ⇒

 0.1. Size:893K  cn hunteck
hgn046ne6al.pdf pdf_icon

HGN046NE6A

HGN046NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 3.8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 5.6 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 95 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A ID (Pacakge Limited) Lead Free, Halogen Free Application Drain Synchrono... See More ⇒

 9.1. Size:1155K  cn hunteck
hgn042n10s.pdf pdf_icon

HGN046NE6A

HGN042N10S P-1 100V N-Ch Power MOSFET VDS Feature 100 V 3.7 RDS(on),typ mW Optimized for high speed smooth switching 112 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application DC-DC Conversion Drain Hard Switching ... See More ⇒

 9.2. Size:774K  cn hunteck
hgn045ne4sl.pdf pdf_icon

HGN046NE6A

HGN045NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 3.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 101 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Syn... See More ⇒

Detailed specifications: HGN036N08SL, HGN040N06S, HGN040N06SL, HGN042N10A, HGN042N10AL, HGN042N10S, HGN042N10SL, HGN045NE4SL, RU7088R, HGN046NE6AL, HGN050N10A, HGN050N10AL, HGN052N10SL, HGN053N06S, HGN053N06SL, HGN055N12S, HGN055N12SL

Keywords - HGN046NE6A MOSFET specs

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