HGN058N08SL Datasheet. Specs and Replacement
Type Designator: HGN058N08SL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 385 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0058 Ohm
Package: DFN5X6
HGN058N08SL substitution
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HGN058N08SL datasheet
hgn058n08sl.pdf
HGN058N08SL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching,Logic Level 4.3 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 5.9 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 100 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free Application Synchronous Rectification ... See More ⇒
hgn053n06s.pdf
HGN053N06S P-1 60V N-Ch Power MOSFET 60 V VDS Feature 4.1 RDS(on),typ mW Optimized for high speed switching 91 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching... See More ⇒
hgn059n08a.pdf
HGN059N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching 4.9 RDS(on),typ mW Enhanced Body diode dv/dt capability 83 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 45 A ID (Pacakge Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and Hig... See More ⇒
hgn052n10sl.pdf
HGN052N10SL P-1 100V N-Ch Power MOSFET 100 V VDS Feature 4.6 RDS(on),typ VGS=10V m Optimized for high speed smooth 5.6 RDS(on),typ VGS=4.5V m switching,Logic level 115 A ID (Sillicon Limited) Enhanced Body diode dv/dt capability 60 A ID (Package Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Application DC-DC Conversion Dr... See More ⇒
Detailed specifications: HGN046NE6AL, HGN050N10A, HGN050N10AL, HGN052N10SL, HGN053N06S, HGN053N06SL, HGN055N12S, HGN055N12SL, IRF3205, HGN059N08A, HGN059N08AL, HGN070N12S, HGN070N12SL, HGN077N10SL, HGN080N08SL, HGN080N10A, HGN080N10AL
Keywords - HGN058N08SL MOSFET specs
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HGN058N08SL replacement
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History: HGN059N08AL
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