All MOSFET. HGN090NE6A Datasheet

 

HGN090NE6A MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGN090NE6A
   Marking Code: GN090NE6A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 567 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
   Package: DFN5X6

 HGN090NE6A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGN090NE6A Datasheet (PDF)

 ..1. Size:932K  cn hunteck
 hgn090ne6a.pdf

HGN090NE6A HGN090NE6A

HGN090NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability7.8RDS(on),typ mW Enhanced Avalanche Ruggedness54 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested30 AID (Package Limited) Lead Free, Halogen FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and Hig

 0.1. Size:1316K  cn hunteck
 hgn090ne6al.pdf

HGN090NE6A HGN090NE6A

HGN090NE6ALP-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic level 7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 55 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A Lead Free, Halogen Free ID (Package Limited)Application Drain Syn

 7.1. Size:764K  cn hunteck
 hgn090n06sl.pdf

HGN090NE6A HGN090NE6A

HGN090N06SLP-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level7.3RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability10RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness62 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested45 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

 8.1. Size:1112K  cn hunteck
 hgn090ae6al.pdf

HGN090NE6A HGN090NE6A

HGN090AE6AL P-165V N-Ch Power MOSFETFeature 65 VVDS High Speed Power Switching, Logic level 8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 42 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 28 A Lead Free, Halogen Free ID (Package Limited)Drain1 Drain2 Application

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History: HGA090N06SL

 

 
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