HGN090NE6AL Datasheet. Specs and Replacement

Type Designator: HGN090NE6AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 518 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: DFN5X6

HGN090NE6AL substitution

- MOSFET ⓘ Cross-Reference Search

 

HGN090NE6AL datasheet

 ..1. Size:1316K  cn hunteck
 hgn090ne6al.pdf pdf_icon

HGN090NE6AL

HGN090NE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 7.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 55 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A Lead Free, Halogen Free ID (Package Limited) Application Drain Syn... See More ⇒

 4.1. Size:932K  cn hunteck
 hgn090ne6a.pdf pdf_icon

HGN090NE6AL

HGN090NE6A P-1 65V N-Ch Power MOSFET Feature High Speed Power Switching 65 V VDS Enhanced Body diode dv/dt capability 7.8 RDS(on),typ mW Enhanced Avalanche Ruggedness 54 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A ID (Package Limited) Lead Free, Halogen Free Application Drain Synchronous Rectification in SMPS Hard Switching and Hig... See More ⇒

 7.1. Size:764K  cn hunteck
 hgn090n06sl.pdf pdf_icon

HGN090NE6AL

HGN090N06SL P-1 60V N-Ch Power MOSFET Feature 60 V VDS High Speed Power Switching, Logic Level 7.3 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 10 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 62 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous ... See More ⇒

 8.1. Size:1112K  cn hunteck
 hgn090ae6al.pdf pdf_icon

HGN090NE6AL

HGN090AE6AL P-1 65V N-Ch Power MOSFET Feature 65 V VDS High Speed Power Switching, Logic level 8 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 11.4 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 42 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 28 A Lead Free, Halogen Free ID (Package Limited) Drain1 Drain2 Application ... See More ⇒

SHOW MORE

Detailed specifications: HGN080N10AL, HGN080N10S, HGN080N10SL, HGN088N15S, HGN088N15SL, HGN090AE6AL, HGN090N06SL, HGN090NE6A, IRFB4227, HGN093N12S, HGN093N12SL, HGN095NE4SL, HGN098N10A, HGN098N10AL, HGN098N10SL, HGN099N15S, HGN100N12S

Keywords - HGN090NE6AL MOSFET specs

 HGN090NE6AL cross reference

 HGN090NE6AL equivalent finder

 HGN090NE6AL pdf lookup

 HGN090NE6AL substitution

 HGN090NE6AL replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs