All MOSFET. HGN093N12S Datasheet

 

HGN093N12S Datasheet and Replacement


   Type Designator: HGN093N12S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 96 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 306 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0093 Ohm
   Package: DFN5X6
 

 HGN093N12S substitution

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HGN093N12S Datasheet (PDF)

 ..1. Size:899K  cn hunteck
 hgn093n12s.pdf pdf_icon

HGN093N12S

HGN093N12S P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching7.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability73 AID (Sillicon Limited) Enhanced Avalanche Ruggedness60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switchi

 0.1. Size:902K  cn hunteck
 hgn093n12sl.pdf pdf_icon

HGN093N12S

HGN093N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness71 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

 9.1. Size:893K  cn hunteck
 hgn098n10a.pdf pdf_icon

HGN093N12S

HGN098N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching8.3RDS(on),typ mW Enhanced Body diode dv/dt capability63 AID (Sillicon Limited) Enhanced Avalanche Ruggedness45 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and H

 9.2. Size:1175K  cn hunteck
 hgn098n10al.pdf pdf_icon

HGN093N12S

HGN098N10ALP-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 8.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 62.8 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A Lead Free, Halogen Free ID (Package Limited)Application Synch

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Datasheet: HGN080N10S , HGN080N10SL , HGN088N15S , HGN088N15SL , HGN090AE6AL , HGN090N06SL , HGN090NE6A , HGN090NE6AL , P55NF06 , HGN093N12SL , HGN095NE4SL , HGN098N10A , HGN098N10AL , HGN098N10SL , HGN099N15S , HGN100N12S , HGN100N12SL .

History: GP1M015A050XX | BLP04N10-B | RQA0008NXAQS | AM2394NE | APT6010B2FLLG | S-LNTK2575LT1G | APT6045BVFRG

Keywords - HGN093N12S MOSFET datasheet

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 HGN093N12S equivalent finder
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