HGN098N10AL Datasheet. Specs and Replacement

Type Designator: HGN098N10AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 74 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 45 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 273 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm

Package: DFN5X6

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HGN098N10AL datasheet

 ..1. Size:1175K  cn hunteck
 hgn098n10al.pdf pdf_icon

HGN098N10AL

HGN098N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 62.8 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A Lead Free, Halogen Free ID (Package Limited) Application Synch... See More ⇒

 4.1. Size:893K  cn hunteck
 hgn098n10a.pdf pdf_icon

HGN098N10AL

HGN098N10A P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 8.3 RDS(on),typ mW Enhanced Body diode dv/dt capability 63 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 45 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and H... See More ⇒

 5.1. Size:897K  cn hunteck
 hgn098n10sl.pdf pdf_icon

HGN098N10AL

HGN098N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.3 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.8 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 63 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous R... See More ⇒

 9.1. Size:902K  cn hunteck
 hgn093n12sl.pdf pdf_icon

HGN098N10AL

HGN093N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 7.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 71 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Re... See More ⇒

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Detailed specifications: HGN090AE6AL, HGN090N06SL, HGN090NE6A, HGN090NE6AL, HGN093N12S, HGN093N12SL, HGN095NE4SL, HGN098N10A, 2N7000, HGN098N10SL, HGN099N15S, HGN100N12S, HGN100N12SL, HGN110N08A, HGN110N08AL, HGN110N10SL, HGN115N15S

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