All MOSFET. HGN098N10SL Datasheet

 

HGN098N10SL Datasheet and Replacement


   Type Designator: HGN098N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 45 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 538 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
   Package: DFN5X6
 

 HGN098N10SL substitution

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HGN098N10SL Datasheet (PDF)

 ..1. Size:897K  cn hunteck
 hgn098n10sl.pdf pdf_icon

HGN098N10SL

HGN098N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level8.3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability10.8RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness63 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested45 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous R

 5.1. Size:893K  cn hunteck
 hgn098n10a.pdf pdf_icon

HGN098N10SL

HGN098N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching8.3RDS(on),typ mW Enhanced Body diode dv/dt capability63 AID (Sillicon Limited) Enhanced Avalanche Ruggedness45 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and H

 5.2. Size:1175K  cn hunteck
 hgn098n10al.pdf pdf_icon

HGN098N10SL

HGN098N10ALP-1100V N-Ch Power MOSFETFeature 100 VVDS High Speed Power Switching, Logic Level 8.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 62.8 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A Lead Free, Halogen Free ID (Package Limited)Application Synch

 9.1. Size:902K  cn hunteck
 hgn093n12sl.pdf pdf_icon

HGN098N10SL

HGN093N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level7.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability9.3RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness71 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

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Datasheet: HGN090N06SL , HGN090NE6A , HGN090NE6AL , HGN093N12S , HGN093N12SL , HGN095NE4SL , HGN098N10A , HGN098N10AL , IRFB4115 , HGN099N15S , HGN100N12S , HGN100N12SL , HGN110N08A , HGN110N08AL , HGN110N10SL , HGN115N15S , HGN115N15SL .

History: CS5NJ540 | RUR020N02 | IXTH05N250P3HV | KI1304BDL | NCV8402AD | HMS4N70F | IPB05CN10NG

Keywords - HGN098N10SL MOSFET datasheet

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