HGN099N15S Datasheet. Specs and Replacement

Type Designator: HGN099N15S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 139 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: DFN5X6

HGN099N15S substitution

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HGN099N15S datasheet

 ..1. Size:1187K  cn hunteck
 hgn099n15s.pdf pdf_icon

HGN099N15S

HGN099N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 9.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 80 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Ha... See More ⇒

 9.1. Size:893K  cn hunteck
 hgn098n10a.pdf pdf_icon

HGN099N15S

HGN098N10A P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching 8.3 RDS(on),typ mW Enhanced Body diode dv/dt capability 63 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 45 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and H... See More ⇒

 9.2. Size:902K  cn hunteck
 hgn093n12sl.pdf pdf_icon

HGN099N15S

HGN093N12SL P-1 120V N-Ch Power MOSFET Feature 120 V VDS High Speed Power Switching, Logic Level 7.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 9.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 71 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Re... See More ⇒

 9.3. Size:1175K  cn hunteck
 hgn098n10al.pdf pdf_icon

HGN099N15S

HGN098N10AL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 8.0 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 10.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 62.8 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 45 A Lead Free, Halogen Free ID (Package Limited) Application Synch... See More ⇒

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Detailed specifications: HGN090NE6A, HGN090NE6AL, HGN093N12S, HGN093N12SL, HGN095NE4SL, HGN098N10A, HGN098N10AL, HGN098N10SL, 8205A, HGN100N12S, HGN100N12SL, HGN110N08A, HGN110N08AL, HGN110N10SL, HGN115N15S, HGN115N15SL, HGN119N15S

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