HGN110N10SL Datasheet. Specs and Replacement

Type Designator: HGN110N10SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 162 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: DFN5X6

HGN110N10SL substitution

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HGN110N10SL datasheet

 ..1. Size:779K  cn hunteck
 hgn110n10sl.pdf pdf_icon

HGN110N10SL

HGN110N10SL P-1 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching, Logic Level 9.2 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 11 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 62 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 60 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous... See More ⇒

 7.1. Size:914K  cn hunteck
 hgn110n08al.pdf pdf_icon

HGN110N10SL

HGN110N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic level 9.5 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 13.5 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 48 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested 30 A ID (Package Limited) Lead Free, Halogen Free Application Synchronous Re... See More ⇒

 7.2. Size:902K  cn hunteck
 hgn110n08a.pdf pdf_icon

HGN110N10SL

HGN110N08A P-1 80V N-Ch Power MOSFET Feature High Speed Power Switching 80 V VDS Enhanced Body diode dv/dt capability 9.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 48 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and High Speed Circuit DC/DC i... See More ⇒

 9.1. Size:1137K  cn hunteck
 hgn119n15s.pdf pdf_icon

HGN110N10SL

HGN119N15S P-1 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Switching 11.4 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 66 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 A ID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain H... See More ⇒

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Detailed specifications: HGN098N10A, HGN098N10AL, HGN098N10SL, HGN099N15S, HGN100N12S, HGN100N12SL, HGN110N08A, HGN110N08AL, AON7408, HGN115N15S, HGN115N15SL, HGN119N15S, HGN120N06SL, HGN120N10A, HGN120N10AL, HGN130N12S, HGN130N12SL

Keywords - HGN110N10SL MOSFET specs

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