All MOSFET. HGN110N10SL Datasheet

 

HGN110N10SL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGN110N10SL
   Marking Code: GN110N10SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 60 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 29 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 162 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN5X6

 HGN110N10SL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGN110N10SL Datasheet (PDF)

 ..1. Size:779K  cn hunteck
 hgn110n10sl.pdf

HGN110N10SL HGN110N10SL

HGN110N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level9.2RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness62 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous

 7.1. Size:914K  cn hunteck
 hgn110n08al.pdf

HGN110N10SL HGN110N10SL

HGN110N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching, Logic level 9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness48 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested30 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Re

 7.2. Size:902K  cn hunteck
 hgn110n08a.pdf

HGN110N10SL HGN110N10SL

HGN110N08A P-180V N-Ch Power MOSFETFeature High Speed Power Switching80 VVDS Enhanced Body diode dv/dt capability9.6RDS(on),typ mW Enhanced Avalanche Ruggedness48 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed Circuit DC/DC i

 9.1. Size:1137K  cn hunteck
 hgn119n15s.pdf

HGN110N10SL HGN110N10SL

HGN119N15SP-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 11.4RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 66 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain H

 9.2. Size:1146K  cn hunteck
 hgn115n15s.pdf

HGN110N10SL HGN110N10SL

HGN115N15S P-1150V N-Ch Power MOSFETFeature 150 VVDS High Speed Power Switching 9.6RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 70 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 60 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Har

 9.3. Size:755K  cn hunteck
 hgn115n15sl.pdf

HGN110N10SL HGN110N10SL

HGN115N15SL P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, Logic Level8RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability9.4RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness73.9 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested60 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronou

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