HGP035N08AL Datasheet. Specs and Replacement

Type Designator: HGP035N08AL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 172 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 150 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 706 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0038 Ohm

Package: TO-220

HGP035N08AL substitution

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HGP035N08AL datasheet

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HGP035N08AL

HGP035N08AL P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching, Logic Level 3.2 RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability 4.3 RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness 150 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching a... See More ⇒

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HGP035N08AL

HGB035N08A , HGP035N08A P-1 80V N-Ch Power MOSFET Feature 80 V VDS High Speed Power Switching TO-263 3 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-220 3.3 RDS(on),typ mW Enhanced Avalanche Ruggedness 161 A ID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SMPS Drain Hard Switching and Hig... See More ⇒

 7.1. Size:1072K  cn hunteck
 hgb035n10a hgk035n10a hgp035n10a.pdf pdf_icon

HGP035N08AL

, P-1 HGB035N10A HGK035N10A HGP035N10A 100V N-Ch Power MOSFET Feature High Speed Power Switching 100 V VDS Enhanced Body diode dv/dt capability 3.1 RDS(on),typ TO-263 mW Enhanced Avalanche Ruggedness 3.3 RDS(on),typ TO-247 mW 100% UIS Tested, 100% Rg Tested 3.4 RDS(on),typ TO-220 mW Lead Free 184 A ID (Sillicon Limited) Application 120 A ID (Package Lim... See More ⇒

 9.1. Size:918K  cn hunteck
 hgb037n10s hgk037n10s hgp037n10s.pdf pdf_icon

HGP035N08AL

HGB037N10S HGK037N10S P-1 , HGP037N10S 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Switching TO-263 2.8 RDS(on),typ m Enhanced Body diode dv/dt capability TO-247 3 RDS(on),typ m Enhanced Avalanche Ruggedness TO-220 3.1 RDS(on),typ m 100% UIS Tested, 100% Rg Tested 190 A ID (Sillicon Limited) Lead Free 120 A ID (Package Limited) Ap... See More ⇒

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Detailed specifications: HGN290N10SL, HGN320N20S, HGN320N20SL, HGN480N15M, HGN640N25S, HGN650N15S, HGN650N15SL, HGP028NE6AL, AO4407, HGP042N10AL, HGP045NE4SL, HGP050N10AL, HGP070N12SL, HGP080N10S, HGP080N10SL, HGP098N10S, HGP100N12SL

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