HGP045NE4SL Datasheet. Specs and Replacement

Type Designator: HGP045NE4SL  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 45 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 114 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 756 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO-220

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HGP045NE4SL datasheet

 ..1. Size:793K  cn hunteck
hgp045ne4sl.pdf pdf_icon

HGP045NE4SL

HGP045NE4SL P-1 45V N-Ch Power MOSFET 45 V VDS Feature 3.5 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.6 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 114 A ID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Synchronous Rectification in SM... See More ⇒

 7.1. Size:1055K  cn hunteck
hgb045n15s hgk045n15s hgp045n15s.pdf pdf_icon

HGP045NE4SL

, P-1 HGB045N15S HGK045N15S HGP045N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 4.1 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 4.1 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 4.1 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 194 A ID (Sillicon Limited) Lead Free 180 A ID (Package Limited) ... See More ⇒

 9.1. Size:1049K  cn hunteck
hgb043n15s hgk043n15s hgp043n15s.pdf pdf_icon

HGP045NE4SL

, P-1 HGB043N15S HGK043N15S HGP043N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 3.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 4.2 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 4.3 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 206 A ID (Sillicon Limited) Lead Free Application Synchronous... See More ⇒

 9.2. Size:822K  cn hunteck
hgb040n06sl hgp040n06sl.pdf pdf_icon

HGP045NE4SL

HGB040N06SL HGP040N06SL P-1 , 60V N-Ch Power MOSFET 60 V VDS Feature 2.9 RDS(on),typ VGS=10V m Optimized for high speed switching, Logic Level 4.1 RDS(on),typ VGS=4.5V m Enhanced Body diode dv/dt capability 3.2 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 4.4 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested 140 A ID (Sillicon Limited) ... See More ⇒

Detailed specifications: HGN320N20SL, HGN480N15M, HGN640N25S, HGN650N15S, HGN650N15SL, HGP028NE6AL, HGP035N08AL, HGP042N10AL, IRFP250, HGP050N10AL, HGP070N12SL, HGP080N10S, HGP080N10SL, HGP098N10S, HGP100N12SL, HGP130N12SL, HGP190N15SL

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