All MOSFET. HGS098N06SL Datasheet

 

HGS098N06SL Datasheet and Replacement


   Type Designator: HGS098N06SL
   Marking Code: GS098N06SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 12.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18.5 nC
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 318 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
   Package: SOIC-8
 

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HGS098N06SL Datasheet (PDF)

 ..1. Size:936K  cn hunteck
 hgs098n06sl.pdf pdf_icon

HGS098N06SL

HGS098N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level8.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability12.4RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness12.8 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPSSOIC-8 Hard S

 7.1. Size:912K  cn hunteck
 hgs098n10a.pdf pdf_icon

HGS098N06SL

HGS098N10A P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching 8.8RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrainSOIC-8Pin2 Hard Switching and High Speed Circuit2

 7.2. Size:915K  cn hunteck
 hgs098n10sl.pdf pdf_icon

HGS098N06SL

HGS098N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 8.7RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness13 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching a

 7.3. Size:907K  cn hunteck
 hgs098n10al.pdf pdf_icon

HGS098N06SL

HGS098N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching,Logic level 8.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness12.9 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching

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