HGS110N08A Datasheet. Specs and Replacement

Type Designator: HGS110N08A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 219 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: SOIC-8

HGS110N08A substitution

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HGS110N08A datasheet

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HGS110N08A

HGS110N08A P-1 80V N-Ch Power MOSFET Feature High Speed Power Switching 80 V VDS Enhanced Body diode dv/dt capability 9.6 RDS(on),typ mW Enhanced Avalanche Ruggedness 12 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Drain Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit SOIC-8 Gat... See More ⇒

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HGS110N08A

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Detailed specifications: HGS090NE6A, HGS090NE6AL, HGS092NE6AL, HGS095NE4SL, HGS098N06SL, HGS098N10A, HGS098N10AL, HGS098N10SL, 60N06, HGS110N08AL, HGS120N06SL, HGS120N10AL, HGS120N10SL, HGS130N12SL, HGS170N10AL, HGS195N15SL, HGS210N12SL

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