All MOSFET. HGS110N08A Datasheet

 

HGS110N08A Datasheet and Replacement


   Type Designator: HGS110N08A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 219 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: SOIC-8
 

 HGS110N08A substitution

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HGS110N08A Datasheet (PDF)

 ..1. Size:903K  cn hunteck
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HGS110N08A

HGS110N08A P-180V N-Ch Power MOSFETFeature High Speed Power Switching80 VVDS Enhanced Body diode dv/dt capability9.6RDS(on),typ mW Enhanced Avalanche Ruggedness12 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and High Speed CircuitSOIC-8Gat

 0.1. Size:908K  cn hunteck
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HGS110N08A

HGS110N08AL P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching,Logic Level9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability13.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness12 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS

Datasheet: HGS090NE6A , HGS090NE6AL , HGS092NE6AL , HGS095NE4SL , HGS098N06SL , HGS098N10A , HGS098N10AL , HGS098N10SL , IRFB7545 , HGS110N08AL , HGS120N06SL , HGS120N10AL , HGS120N10SL , HGS130N12SL , HGS170N10AL , HGS195N15SL , HGS210N12SL .

History: HGS290N10SL

Keywords - HGS110N08A MOSFET datasheet

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