HGS120N10AL MOSFET. Datasheet pdf. Equivalent
Type Designator: HGS120N10AL
Marking Code: GS120N10AL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 11 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 200 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOIC-8
HGS120N10AL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGS120N10AL Datasheet (PDF)
hgs120n10al.pdf
HGS120N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level12.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability15.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness11 AID (Silicon limited) 100% UIS Tested, 100% Rg Tested36 AID (Package Limited) Lead Free, Halogen FreeApplicationDrain Synchr
hgs120n10sl.pdf
HGS120N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness12 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching
hgs120n06sl.pdf
HGS120N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability12RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness11 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and H
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 2N4416AC1A
History: 2N4416AC1A
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