All MOSFET. HGS120N10AL Datasheet

 

HGS120N10AL MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGS120N10AL
   Marking Code: GS120N10AL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 21 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SOIC-8

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HGS120N10AL Datasheet (PDF)

 ..1. Size:909K  cn hunteck
hgs120n10al.pdf

HGS120N10AL
HGS120N10AL

HGS120N10AL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level12.0RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability15.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness11 AID (Silicon limited) 100% UIS Tested, 100% Rg Tested36 AID (Package Limited) Lead Free, Halogen FreeApplicationDrain Synchr

 5.1. Size:929K  cn hunteck
hgs120n10sl.pdf

HGS120N10AL
HGS120N10AL

HGS120N10SL P-1100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Switching, Logic Level9.5RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability11.5RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness12 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching

 7.1. Size:906K  cn hunteck
hgs120n06sl.pdf

HGS120N10AL
HGS120N10AL

HGS120N06SL P-160V N-Ch Power MOSFETFeature60 VVDS High Speed Power Switching, Logic Level9RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability12RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness11 AID 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS Hard Switching and H

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History: 2N4416AC1A

 

 
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