SDU07N65 Specs and Replacement
Type Designator: SDU07N65
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 94 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 93 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
SDU07N65 substitution
- MOSFET ⓘ Cross-Reference Search
SDU07N65 datasheet
sdu07n65 sdd07n65.pdf
Green Product SDU/D07N65 a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) ( ) Typ Rugged and reliable. 650V 7A 1.2 @ VGS=10V Suface Mount Package. D G G S S SDU SERIES SDD SERIES SDD SERIES TO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK) O... See More ⇒
Detailed specifications: SP2103 , SP2102 , FDS8958B , SP2013 , SP07N65 , FDS8978 , 2SK3116B , FDS8984 , K2611 , FDS8984F085 , SDU06N60 , FDS9400A , FDS9431A , FDS9431AF085 , FDS9926A , FDS9933BZ , FDS9934C .
History: GSM7923WS
Keywords - SDU07N65 MOSFET specs
SDU07N65 cross reference
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: GSM7923WS
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