All MOSFET. HGS130N12SL Datasheet

 

HGS130N12SL Datasheet and Replacement


   Type Designator: HGS130N12SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 222 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: SOIC-8
 

 HGS130N12SL substitution

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HGS130N12SL Datasheet (PDF)

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HGS130N12SL

HGS130N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level10.3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability12.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness11 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS

Datasheet: HGS098N10A , HGS098N10AL , HGS098N10SL , HGS110N08A , HGS110N08AL , HGS120N06SL , HGS120N10AL , HGS120N10SL , IRF3205 , HGS170N10AL , HGS195N15SL , HGS210N12SL , HGS220N10SL , HGS230N10AL , HGS290N10SL , HGS380N12S , HGS480N15M .

Keywords - HGS130N12SL MOSFET datasheet

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