All MOSFET. HGS130N12SL Datasheet

 

HGS130N12SL Datasheet and Replacement


   Type Designator: HGS130N12SL
   Marking Code: GS130N12SL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 15 nC
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 222 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0125 Ohm
   Package: SOIC-8
 

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HGS130N12SL Datasheet (PDF)

 ..1. Size:909K  cn hunteck
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HGS130N12SL

HGS130N12SL P-1120V N-Ch Power MOSFETFeature120 VVDS High Speed Power Switching, Logic Level10.3RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability12.0RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness11 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeDrainApplication Synchronous Rectification in SMPS

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: HTS600C06 | NCE65NF099

Keywords - HGS130N12SL MOSFET datasheet

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