All MOSFET. HGS750N15ML Datasheet

 

HGS750N15ML Datasheet and Replacement


   Type Designator: HGS750N15ML
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 4.6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 37 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: SOIC-8
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HGS750N15ML Datasheet (PDF)

 ..1. Size:906K  cn hunteck
 hgs750n15ml.pdf pdf_icon

HGS750N15ML

HGS750N15ML P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching, logic level63RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability70RDS(on),typ VGS=4.5V mW Enhanced Avalanche Ruggedness4.6 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed

 4.1. Size:905K  cn hunteck
 hgs750n15m.pdf pdf_icon

HGS750N15ML

HGS750N15M P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching65RDS(on),typ mW Enhanced Body diode dv/dt capability4.6 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplicationDrain Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power ToolsSOIC-8Gate UPS

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History: STM4439A | DMC2038LVT-7-F | DMN66D0LDW | BLF578XR | ZXMS6004FFQ | STM6920 | STD11NM60ND

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