HGT016NE6A Datasheet and Replacement
Type Designator: HGT016NE6A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 319 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 240 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 28 nS
Cossⓘ - Output Capacitance: 3042 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: TOLL
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HGT016NE6A Datasheet (PDF)
hgt016ne6a.pdf

HGT016NE6A P-165V N-Ch Power MOSFETFeature High Speed Power Switching65 VVDS Enhanced Body diode dv/dt capability1.3RDS(on),typ mW Enhanced Avalanche Ruggedness355 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested240 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and H
hgt015n10s.pdf

HGT015N10S P-1100V N-Ch Power MOSFETFeature High Speed Power Switching100 VVDS Enhanced Body diode dv/dt capability1.3RDS(on),typ mW Enhanced Avalanche Ruggedness446 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested360 AID (Package Limited) Lead Free, Halogen FreeApplication Synchronous Rectification in SMPS Hard Switching and High S
hgt019n08a.pdf

HGT019N08A P-180V N-Ch Power MOSFETFeature80 VVDS High Speed Power Switching1.6RDS(on),typ mW Enhanced Body diode dv/dt capability294 AID (Sillicon Limited) Enhanced Avalanche Ruggedness240 AID (Package Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and H
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: IRFI7536G | WMM11N80M3 | FDMS9620S
Keywords - HGT016NE6A MOSFET datasheet
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History: IRFI7536G | WMM11N80M3 | FDMS9620S



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