HGW195N15S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGW195N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 96 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 59 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 130 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0195 Ohm
Package: TO-262
HGW195N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGW195N15S Datasheet (PDF)
hgw195n15s.pdf
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HGW195N15S P-1150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Switching16RDS(on),typ VGS=10V mW Enhanced Body diode dv/dt capability59 AID (Sillicon Limited) Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Synchronous Rectification in SMPSDrain Hard Switching and High Speed CircuitTO
hgw190n15sl.pdf
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HGW190N15SL P-1150V N-Ch Power MOSFET150 VVDSFeature16.0RDS(on),typ VGS=10V m Optimized for high speed smooth 19RDS(on),typ VGS=4.5V mswitching,Logic level 69 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg TestedApplication DC-DC Conversion Drain Hard Switching and H
hgw190n15s.pdf
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HGW190N15S P-1150V N-Ch Power MOSFET150 VVDSFeatureTO-262 16RDS(on),typ m Optimized for high speed smooth switching79 AID (Sillicon Limited) Enhanced Body diode dv/dt capability Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication DC-DC Conversion Drain Hard Switching and High Speed CircuitPi
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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