HTN027N03P MOSFET. Datasheet pdf. Equivalent
Type Designator: HTN027N03P
Marking Code: TN027N03P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 78 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id|ⓘ - Maximum Drain Current: 122 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 88 nC
trⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 492 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0029 Ohm
Package: DFN5X6
HTN027N03P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTN027N03P Datasheet (PDF)
htn027n03p.pdf
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